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Porous Semiconductors: A Tutorial Review

Published online by Cambridge University Press:  15 February 2011

L T Canham
L T Canham*
Affiliation:
DRA, St Andrews Road, Malvern, Worcestershire. WR14 3PS, UK.
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Abstract

Porous semiconductors constitute a class of material that exhibit surprising properties, are quite easy to fabricate, but are however fragile, complex, and difficult to characterise. This tutorial review extracts specific topics from the large knowledge base now available on porous Si that are deemed relevant to other porous semiconductors beginning to receive study. It also highlights topics where controversy is now resolved, where problems remain, and where further effort could be focused.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 29
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1]Canham, L T. Appl Phys Lett 57, 1046 (1990).Google Scholar
[2]Smith, R L, Collins, S D. J Appl Phys 71, RI (1992).Google Scholar
[3]Kang, Y, Jorre, J. J Electrochem Soc 140, 2836 (1993).Google Scholar
[4]Allongue, P, de Villeneuve, C H, Pinsard, L, Bernard, M C. Appl Phys Lett 67, 941 (1995).Google Scholar
[5]Jung, K H, Shih, S, Kwong, D L. J Electrochem Soc 140, 3046 (1993).Google Scholar
[6]Halimaoui, A in Porous Silicon Science and Technology edited by Vial, J and Derrien, J. (Springer-Verlag, Berlin 1995) p33.Google Scholar
[7]Thonissen, M, Billat, S, Kruger, M, Luth, H, Berger, M G, Frotscher, U, Rossow, U. J Appl Phys 80, 2990 (1996).Google Scholar
[8]Fathauer, R W, George, T, Ksendzov, A, Vasquez, R P. Appl Phys Lett 60, 995 (1992).Google Scholar
[9]Noguchi, N, Suemene, I. Appl Phys Lett 62, 1429 (1993).Google Scholar
[10]Ueno, T, Akiba, Y, Shinohara, T, Koyama, H, Koshida, N, Tarvi, Y. Jpn J Appl Phys 32, L5 (1993).Google Scholar
[11]Bustarret, E, Ligeon, M, Ortega, L, Sol State Commun 83, 461 (1992).Google Scholar
[12]Wehrspoon, R B, Chazalviel, J N, Ozanam, F, Solomon, I. Phys Rev Lett 77, 1885 (1996).Google Scholar
[13]Menna, P, Tsuo, Y S, Al-Jassim, M M, Asher, S E, Pern, F J, Ciszek, T F. J Electrochem Soc, 143 L115 (1996).Google Scholar
[14]Gruning, U, Yelon, A. Thin Sol Films 255, 135 (1995).Google Scholar
[15]Canham, L T, Cullis, A G, Pickering, C, Dosser, O, Cox, T I, Lynch, T P. Nature 368, 133 (1994).Google Scholar
[16]Belmont, O, Bellet, D, Brechet, Y. J Appl Phys 79, 7586 (1996).Google Scholar
[17]Amato, G, Brunetto, N. Mater Lett 26, 295 (1996).Google Scholar
[18]Canham, L T, Houlton, M R, Leong, W Y, Pickering, C, Keen, J M. J Appl Phys 70, 422 (1991).Google Scholar
[19]Canham, L T, Saunders, S J, Heeley, P B, Keir, A M, Cox, T I. Adv Mater 6, 865 (1994).Google Scholar
[20]Kovalev, D I, Yarostietzkii, I D, Muschik, T, Petrova-Koch, V, Koch, F. Appl Phys Lett 64, 214 (1994).Google Scholar
[21]Loni, A, Simons, A J, Calcott, P D J, Canham, L T. J Appl Phys 77, 3557 (1995).Google Scholar
[22]Canham, L T, Loni, A, Calcott, P D J, Simons, A J, Reeves, C, Houlton, M R, Newey, J P, Nash, K J, Cox, T I. Thin Solid Films 276, 112 (1996).Google Scholar
[23]Saga, K, Hattori, T. J Electrochem Soc 143, 3279 (1996).Google Scholar
[24]Bsiesy, A, Gaspard, F, Henno, R, Ligeon, M, Muller, F, Oberlin, J C. J Electrochem Soc 138, 3450 (1991).Google Scholar
[25]Kozlowski, F, Wagenseil, W, Steiner, P, Lang, W. Mat Res Soc Symp Vol 358, 677 (1995).Google Scholar
[26]Petrova-Koch, V, Muschik, T, Kux, A, Meyer, B K, Koch, F, Lehman, V. Appl Phys Lett 61, 943 (1992).Google Scholar
[27]Chen, H, Hou, X, Li, G, Zhang, F, Yu, M, Wang, X. J Appl Phys 79, 3282 (1996).Google Scholar
[28]Keefe, P O, Aoyagi, Y, Komuro, S, Kato, T, Morikawa, T. Appl Phys Lett 66, 836 (1995).Google Scholar
[29]Fu, J S, Mao, J C, Wu, E, Zia, Y Q, Zhang, B R, Zhang, L Z, Qin, G C, Wui, G S, Zhang, Y H. Appl Phys Lett 63, 1830 (1993).Google Scholar
[30]Dubin, V M, Viellard, C, Ozanam, F, Chazalviel, J N. Phys Stat Sol (b) 190, 47 (1995).Google Scholar
[31]Giaddiu, T, Forcey, K S, Earwaker, L G, Loni, A, Canham, L T, Halimaoui, A. J Phys D 29, 1580 (1996).Google Scholar
[32]Halimaoui, A, Campidelli, Y, Badoz, P A, Bensahel, D. J Appl Phys 78, 3428 (1995)Google Scholar
[33]Ducso, C, Khanh, N Q, Horvath, Z, Barsony, I, Utriaven, M, Lehto, S, Nieminen, M, Niinisto, L. J Electrochem Soc 143, 683 (1996).Google Scholar
[34]Duttagupta, S P, Chen, X L, Jerekhe, S A, Fauchet, P M. Sol State Commun 101, 33 (1997).Google Scholar
[35]Ronkel, F, Schultze, J W, Arens-Fischer, R. Thin Sol Films 276, 40 (1996).Google Scholar
[36]Fauchet, P M. J Lumin 70, 294 (1996).Google Scholar
[37]Canham, L T. Phys Stat Sol (b) 190, 9 (1995).Google Scholar
[38]Calcott, P D J, Nash, K J, Canham, L T, Kane, M J, Brumhead, D. J Lumin 57, 257 (1993).Google Scholar
[39]Koch, F, Kovalev, D, Averboukh, B, Polisski, G, Ben Chorin, M. J Lumin 70, 320 (1996).Google Scholar
[40]Bsiesy, A, Vial, J C. J Lumin 70, 310 (1996).Google Scholar
[41]Tischler, M A, Collins, R T, Stathis, J H, Tsang, J C. Appl Phys Lett 60, 639 (1992).Google Scholar
[42]Fischer, D L, Gamboa, A, Harper, J, Lauerhaus, J M, Sailor, M J. MRS Proc Vol 358, 507 (1995).Google Scholar
[43]Mihalcescu, I, Ligeon, M, Muller, F, Romestain, R, Vial, J C. J Lumin 57, 111 (1993).Google Scholar
[44]Cullis, A G, Canham, L T. Nature 353, 335 (1991).Google Scholar
[45]Berberzier, I, Halimaoui, A. J Appl Phys 74, 542 (1993).Google Scholar
[46]Albu-Yaron, A, Bastide, S, Bouchet, D, Brun, N, Collieux, C, Levy-Clement, C. J Phys, France 4, 1181 (1994).Google Scholar
[47]Binder, M, Edelmann, T, Mitzger, T H, Peisl, J. Sol State Commun 100, 13 (1996).Google Scholar
[48]Munder, H, Andrzejak, C, Berger, M G, Klemradt, U, Luth, H, Herino, R, Ligeon, M. Thin Sol Films 221, 27 (1992).Google Scholar
[49]Schuppler, S, Friedman, S L, Marcus, M A, Adler, D L, Xie, Y H, Ross, F M, Chabal, Y J, Harris, T D, Brus, L E, Brown, W L, Chaban, E E, Szajowski, P F, Christman, S B, Citrin, P H. Phys Rev B 52, 4910 (1995).Google Scholar
[50]Zhang, Q, Bayliss, S C. J Appl Phys 79, 1351 (1996).Google Scholar
[51]Delley, B, Steigmeier, E F. Appl Phys Lett 67, 2370 (1995).Google Scholar
[52]da Fonesca, R J M, Saurei, J M, Foucaran, A, Camassel, J, Massone, E, Taliercio, T. J Mat Sci 30, 35 (1995).Google Scholar
[53]Bellet, D, Lamagnere, P, Vincent, A, Brechet, Y. J Appl Phys 80, 3772 (1996).Google Scholar
[54]Amato, G, Boarino, L, Benedetto, G, Spagnolo, R. Thin Sol Films 255, 111 (1995).Google Scholar
[55]Lang, W, Drost, A, Steiner, P, Sandmaier, H. MRS Proc Vol 358, 561 (1995).Google Scholar
[56]Loni, A, Canham, L T, Berger, M G, Arens Fischer, R, Munder, H, Luth, H, Arrand, H, Benson, T M. Thin Solid Films 276, 143 (1996).Google Scholar
[57]Matsumoto, T, Hasegawa, N, Tamaki, T, Ueda, K, Futagi, T, Mimura, H, Kanemitsu, Y. Jpn J Appl Phys 33, L35 (1994).Google Scholar
[58]Tsai, C, Li, K H, Campbell, J C, Tasch, A. Appl Phys Lett 62, 2818 (1993).Google Scholar
[59]Canham, L T, Cox, T I, Loni, A, Simons, A J. Appl Surf Sci 102, 436 (1996).Google Scholar
[60]Koshida, N, Koyama, H. Appl Phys Lett 60, 347 (1992).Google Scholar
[61]Steiner, P, Kozlowski, F, Lang, W. Appl Phys Lett 62, 2700 (1993).Google Scholar
[62]Loni, A, Simons, A J, Cox, T I, Calcott, P D J, Canham, L T. Electron Lett 31, 1288 (1995).Google Scholar
[63]Soref, R A. Proc IEEE 81, 1687 (1993).Google Scholar
[64]Hirschmann, K D, Tsybeskov, L, Duttagupta, S P, Fauchet, P M. Nature 384, 338 (1996).Google Scholar
[65]Canham, L T. Adv Mater 7, 1033 (1995).Google Scholar