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Polysilicon Emitter Transistors Manufactured using a Novel Limited Reaction Processing System

Published online by Cambridge University Press:  25 February 2011

Fred Ruddell ,
Colin Parkes ,
B Mervyn Armstrong  and
Harold S Gamble
Fred Ruddell
Affiliation:
Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH N, Ireland
Colin Parkes
Affiliation:
Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH N, Ireland
B Mervyn Armstrong
Affiliation:
Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH N, Ireland
Harold S Gamble
Affiliation:
Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH N, Ireland
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Abstract

This paper describes a LPCVD reactor which was developed for multiple sequential in-situ processing. The system is capable of rapid thermal processing in the presence of plasma stimulation and has been used for native oxide removal, plasma oxidation and silicon deposition. Polysilicon layers produced by the system are incorporated into N-P-N polysilicon emitter bipolar transistors. These devices fabricated using a sequential in-situ plasma clean-polysilicon deposition schedule exhibited uniform gains limited to that of long single crystal emitters. Devices with either plasma grown or native oxide layers below the polysilicon exhibited much higher gains. The suitability of the system for sequential and limited reaction processing has been established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 133
Copyright
Copyright © Materials Research Society 1989

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References

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