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Polysilicon and Simox Characterization Using Spectroscopic Ellipsometry

Published online by Cambridge University Press:  22 February 2011

L. M. Asinovsky
L. M. Asinovsky*
Affiliation:
Rudolph Research, Flanders, NJ 07836
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Abstract

Spectroscopic ellipsometry has been used to characterize Poly-Si, prepared with the bulk LPCVD technology and SIMOX samples. SIMOX samples were prepared by implantation of the oxygen ion (≈ 1.8×1018ions/cm 2 at 200keV) of the c-Si substrate and annealing at 1300°C for 5 h. The measurements were taken at angles of incidence of 65 and 70 degrees in the wavelength range from 260 to 860 nm. The analysis of the data identified the presence of the inhomogeneity in the poly-Si layer and slight deviation of the Si layer optical constants spectra from that of the c-Si in the SIMOX sample. A method is presented that provides a step by step procedure for interpretation of the spectroscopic ellipsometry measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 579
Copyright
Copyright © Materials Research Society 1993

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References

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