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Polymeric Materials Requirements for the GE High-Density Interconnect Process

Published online by Cambridge University Press:  15 February 2011

H.S. Cole ,
B. Gorowitz ,
T. Gorczyca ,
R. Wojnarowski  and
J. Lupinski
H.S. Cole
Affiliation:
General Electric Company, Research and Development, P.O. Box 8, Schenectady, N.Y. 12301
B. Gorowitz
Affiliation:
General Electric Company, Research and Development, P.O. Box 8, Schenectady, N.Y. 12301
T. Gorczyca
Affiliation:
General Electric Company, Research and Development, P.O. Box 8, Schenectady, N.Y. 12301
R. Wojnarowski
Affiliation:
General Electric Company, Research and Development, P.O. Box 8, Schenectady, N.Y. 12301
J. Lupinski
Affiliation:
General Electric Company, Research and Development, P.O. Box 8, Schenectady, N.Y. 12301
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Abstract

In the GE High-Density Interconnect Process, thermoplastic polyetherimide adhesives with selectively variable glass transition temperatures (Tg's) are used as chip attach and overlay adhesive. Alternating layers of patterned metal and dielectric are then applied to fabricate the interconnect structure. Upper layer dielectrics are formed using a modified siloxane-polyimide that can be processed at temperatures below 200 °C. The unique materials requirements and materials development issues associated with this approach are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 264: Symposium G – Electronic Packaging Materials Science VI , 1992 , 43
Copyright
Copyright © Materials Research Society 1992

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References

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