Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:03:35.019Z Has data issue: false hasContentIssue false

Poly(ethynyl-p-xylylene), An Advanced Molecular Caulk CVD Polymer

Published online by Cambridge University Press:  01 February 2011

Brad P. Carrow
Affiliation:
Brewer Science Inc., 2401 Brewer Drive, Rolla, MO 65401 [email protected]
Rex E. Murray
Affiliation:
Brewer Science Inc., 2401 Brewer Drive, Rolla, MO 65401 [email protected]
Benjamin W. Woods
Affiliation:
Brewer Science Inc., 2401 Brewer Drive, Rolla, MO 65401 [email protected]
Jay J. Senkevich
Affiliation:
Brewer Science Inc., 2401 Brewer Drive, Rolla, MO 65401 [email protected]
Get access

Abstract

Poly(p-xylylene) (also known as parylene N) has previously been used to pore seal ultralow k (≤ 2.2) (ULK) dielectrics. The parylene polymers may facilitate the integration of ULK dielectrics by: substantially improving their fracture toughness, hermetically sealing the pores, being able to use standard wet chemical cleans, and minimally impacting the observed dielectric constant, while minimally disrupting current process flow integrations. This paper introduces a new cross-linkable polymer that is deposited using thermal chemical vapor deposition (CVD) on the same tool that is used for parylene N deposition. The polymer, poly(ethynyl-p-xylylene) (parylene X), was deposited at room temperature. A series of 30 min post-deposition anneals in helium shows that the deposited material cross-linked between 200°C and 300°C with full conversion at 380°C for a ~300 A film. After the low molecular weight species out-gassed during anneals at 200°C, there was less than a percent weight loss to 450°C with no change in the optical constants and no optical loss. Previous work with poly(ethyl-p-xylylene) suggests that the dielectric constant of parylene X will be significantly lower than parylene N.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Maidenberg, D., Volksen, W., Miller, R., and Dauskardt, R. H., Nature Materials, 3, 464–9 (2004).Google Scholar
2. Xie, B. ad Muscat, A.J., Proc. — Electrochem. Soc. 2003-26, no. Cleaning Technology in Semiconductor Device Manufacturing VIII, 279288 (2004).Google Scholar
3. Hua, X., Stolz, C., Oehrlein, G.S., Lazzeri, P., Coghe, N., Anderle, M., Inoki, C.K., Kuan, T.S., Jiang, P., J. Vac. Sci. Technol, A, 23, 151164 (2005).Google Scholar
4. Jezewski, C., Lanford, W.A., Senkevich, J.J., Wiegand, C. J., Mallikarjunan, A., Lu, D., Wang, G.C., Lu, T.M., Jin, C., J. Electrochem. Soc., 151(7) F157161 (2004).Google Scholar
5. Bae, D.L., Jezewski, C., Cale, T.S. and Senkevich, J.J., In Press Chem. Vapor DepGoogle Scholar
6. Gorham, W.F., J. Polym. Sci: Part A-1 4, 3027–39 (1966).Google Scholar
7. Xu, C. and Baum, T.H., Mat. Res. Soc. Symp. Proc. 555, 155160 (1999).Google Scholar
8. Senkevich, J.J., Desu, S.B., Chem. Mat. 11(7), 1814–21 (1999).Google Scholar
9. Senkevich, J.J., Mallikarjunan, A., Wiegand, C.J., Lu, T.M., Bani-Salameh, H.N., and Lichti, R.L., Electrochem. Solid-State Lett. 7(4) G5658 (2004).Google Scholar
10. Senkevich, J.J., Chem. Vap. Deposition 5(6), 257–60 (1999).Google Scholar
11. Senkevich, J.J., Yang, G.R., and Lu, T.M., Colloids and Surfaces A 216 167173 (2003).Google Scholar
12. Beach, W.F., Lee, C., Bassett, D.R., Austin, T.M., and Olson, R., Encycl. Polym. Sci. Eng. 17, 9901025, Wiley, New York (1989).Google Scholar
13. Senkevich, J.J., Mitchell, C.J., Vijayaraghavan, A., Barnat, E.V., McDonald, J.F., Lu, T.M., J. Vac. Sci. & Tech. A 20(4) 1445–9 (2002).Google Scholar