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Polycrystalline β-SiC Film Growth on Si by ECR-CVD at 178 - 500°C

Published online by Cambridge University Press:  15 February 2011

Kuan-Lun Cheng ,
Chih-Chien Liu ,
Chung-Min Fu ,
Huang-Chung Cheng ,
Chiapyng Lee  and
Tri-Rung Yew
Kuan-Lun Cheng
Affiliation:
Dept. of Elec. Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC
Chih-Chien Liu
Affiliation:
Dept. of Chem. Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Chung-Min Fu
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Huang-Chung Cheng
Affiliation:
Dept. of Elec. Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC
Chiapyng Lee
Affiliation:
Dept. of Chem. Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
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Abstract

Polycrystalline β-SiC, with grain size up to 0.2 μm, was grown on silicon substrate by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from SiH4/CH4/H2 at 178–500 °C. The nucleation process and surface structure of polycrystalline SiC were investigated via observing the film surface by atomic force microscopy (AFM). Reaction species which promote polycrystalline SiC was in-situ monitored by quadruple mass spectrum analysers during deposition process, which is crucial for the control of polycrystalline SiC growth. The microstructure of SiC films were inspected by bright-field imaging, dark-field imaging, and electron diffraction in cross-sectional transmission electron microscopy. This paper will also discuss the key parameters for the nucleation and growth of polycrystalline β-SiC at very low temperature in ECR-CVD system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 271
Copyright
Copyright © Materials Research Society 1996

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