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Polycrystalline Diamond Films for X-Ray Lithography

Published online by Cambridge University Press:  15 February 2011

S. J. Whitehair ,
J. E. Yehoda ,
R. Fuentes ,
R. A. Roy ,
C. R. Guarnieri  and
J. J. Cuomo
S. J. Whitehair
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
J. E. Yehoda
Affiliation:
Diamonex Inc., 7150 Windsor Drive, Allentown, PA 18106
R. Fuentes
Affiliation:
Materials and Technologies Corp., 341 Sheafe Rd., Poughkeepsie, NY 12601
R. A. Roy
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
C. R. Guarnieri
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
J. J. Cuomo
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Microwave driven discharges are finding increasing use in semiconductor areas such as deposition, etching, cleaning and ashing. One application that is of particular interest is the use of microwave discharge grown thin film diamond as a x-ray mask. Because of diamonds extreme properties these masks offer potential advantages over current silicon based mask technology. A review of diamond mask technology will be presented and compared to competing technologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993 , 97
Copyright
Copyright © Materials Research Society 1993

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References

1. ans, J.C. Angus Hayman, C.C., Science 241, 913 (1988)Google Scholar
2. Yarbrough, W.A. and Messier, R., Science 247, 688 (1990)Google Scholar
3. Bachmann, P.K., Leers, D. and Lydtin, H., Diam. Relat. Mater., 1(1), 1 (1991)Google Scholar
4. Guamieri, C.R., Cuomo, J.J., Whitehair, S.J., Berry, B.S., Pritchet, W.C., Acosta, R.E., and Wilson, A.D., SPIE Diamond Optics III vol.1325, 326 (1990)Google Scholar
5. Valdes, J.L. et al., J. Electrochen. Soc. 138, 635 (1991)Google Scholar
6. MRS Extended Abstracts (EA-15), eds. Johnson, G.H., Badzian, A.R. and Geis, M.W., p. 107 (1988)Google Scholar
7. Zhu, W. et al., SPIE Diamond Optics III, vol.1325, 187 (1990)Google Scholar
8. Kawato, T. et al., Jap. J. Appl. Phys. 26, 1429 (1987)Google Scholar
9. Saito, et al., J. Mater. Sci. 23, 842 (1988)Google Scholar
10. Liou, et al., J. Mater. Res. 5, 2305 (1990)Google Scholar
11. Joshi, A. et al., J. Mater. Res. 6, 1484 (1991)Google Scholar
12. Maldonado, J.R., J. Electronic Mater., 19(7), p. 699 (1990)Google Scholar
13. Karnezos, , J. Vac. Sci. Technol. B4 226 (1986)CrossRefGoogle Scholar
14. Berry, B.S., Pritchet, W.C., and Uzoh, E.E., J. Vac. Sci. Technology. B, 7(6), .1556 (1989)Google Scholar
15. Berry, B.S., Pritchet, W.C., Cuomo, J.J., Guamieri, C.R., and Whitehair, S.J., Appl. Phys. Lett. 57, 302 (1990)Google Scholar
16. Fuentes, R.I., Progler, C., Bukofsky, S., and Kimmel, K., J. Vac. Sci. Technol. B, 10(6), Nov/Dec (1992)Google Scholar
17. Vladimirsky, Y., Maldonado, J.R., Vladimmirsky, O., Starikov, A., Fuentes, R., Guarnieri, D., Whitehair, S., and Cuomo, J., J. Vac. Sci. Technol. B 8, 1579 (1990)Google Scholar
18. Windischmann, H. et al., ICNDST-2Google Scholar
19. Yehoda, J.E. and Cuomo, J.J., (to be published).Google Scholar
20. Yehoda, J.E. and Cuomo, J.J., IBM Reseach Report RC-XXX, 1992.Google Scholar
21. Wells, G.M. et al., JVST B 8, 1575 (1990)Google Scholar
22. Redaelli, R. et al., Microelectronics Eng. 13, 263 (1991)Google Scholar
23. Suzuki, K., Microelectron. Process. Phen. vol.9, p.3266 (1991)Google Scholar
24. Suzuki, K., Kumar, R., Windischmann, H., Sano, H., Iimmura, Y., Miyashita, H., and Watanabe, N., JVST B 9, 3266 (1991)Google Scholar
24. Lochel, B., Huber, H.L., Klages, C.P., Schafer, L., and Bluhm, A., JVST B 10, 3201 (1992)Google Scholar