Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-05T12:23:50.718Z Has data issue: false hasContentIssue false
  • English
  • Français

Polycrystalline Diamond, Boron Nitride and Carbon Nitride Thin Film Cold Cathodes

Published online by Cambridge University Press:  10 February 2011

R. W. Pryor
R. W. Pryor*
Affiliation:
Institute for Manufacturing Research, Wayne State University, Detroit, Michigan 48201
Get access

Abstract

Recent observations are presented on the emission of electrons from n-type polycrystalline diamond and from two new families of nitride-based cold cathode films, n-type boron nitride (BN) and n-type carbon nitride (CN). The n-type polycrystalline diamond films were synthesized by MPECVD. The BN and CN n-type films (∼150 nm) were synthesized by reactive laser ablation on n-type polycrystalline diamond (∼24 μm) on (100)Si.

Emission current densities have been measured as high as 119 ma cm−2. Extraction fields have been observed to range from ∼0 V μm−1 up. The diamond films show a field activated thermionic behavior. Both the BN and the CN films show a power-law current density / applied field response implying a negative electron affinity (NEA) type behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 425
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Condon, E.U. and Odishaw, H., Handbook of Physics, (McGraw-Hill, New York, 1958) p 8–74.Google Scholar
2. Modinos, A., Field, Thermionic, and Secondary Electron Emission Spectroscopy, (Plenum Press, New York, 1984).Google Scholar
3. Landee, R. W., Davis, D. C. and Albrecht, A. P.,, Electronic Designer's Handbook, (McGraw-Hill, New York, 1957) p 2–9.Google Scholar
4. lannazzo, S., “A Survey of the Present Status of Vacuum Microelectronics”, Solid-State Electron. 36 (3), 301 (1993).Google Scholar
5. Xu, N.S., Latham, R.V., and Tzeng, Y., “Field-dependence of the area-density of'cold’ electron emission sites on broad-area CVD diamond films”, Electron. Lett. 29 (18), 1596 (1993).Google Scholar
6. Wang, C., Garcia, A., Ingram, D.C., Lake, M. and Kordesch, M.E., “Cold field emission from CVD diamond films observed in emission electron microscopy”, Electron. Lett. 27 (16), 1459 (1991).Google Scholar
7. Geis, M.W., Efremow, N.N., Woodhouse, J.D., McAleese, M.D., Marchywka, M., Socker, D.G., and Hochedez, J.F., “Diamond Cold Cathode”, IEEE Electron Dev. Lett. 12 (8), 456 (1991).Google Scholar
8. Pryor, R.W., Patent Pending.Google Scholar
9. Pryor, R.W., Patent Pending.Google Scholar
10. Pryor, R.W., Padmanabhan, K.R., Chawla, K., “Diamond on Heteroepitaxial cBN on Si(100)” Diamond and Related Materials 4, 128 (1995).Google Scholar
11. Pryor, R.W., Wu, Z.L., Padmanabhan, K.R., Villanueva, S., Thomas, R.L., “Characterization of laser-ablated boron nitride thin films on silicon”, Thin Solid Films 253, 243(1994).Google Scholar
12. Kittel, C., Introduction to Solid State Physics, 5th Edition (John Wiley & Sons, Inc., New York, 1976) p 238.Google Scholar
13. Smith, R. A., Semiconductors, (Cambridge University Press, Cambridge, 1968) p 170.Google Scholar
14. Condon, E.U. and Odishaw, H., Handbook of Physics, (McGraw-Hill, New York, 1958) p 8–86.Google Scholar
15. Zangwill, A., Physics at Surfaces, (Cambridge University Press, Cambridge, 1988) p 230.Google Scholar
16. Sze, S.M., Physics of Semiconductor Devices, (Wiley-Interscience, New York 1969) p 635.Google Scholar