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Pole Figure Analysis of Epitaxial Films of ZnO:2wt%Al Grown on Sapphire Substrates by RF Magnetron Sputtering

Published online by Cambridge University Press:  01 February 2011

P. Kuppusami ,
S. Fiechter  and
K. Ellmer
P. Kuppusami
Affiliation:
Indira Gandhi Centre for Atomic Research, 603102 Kalpakkam, India
S. Fiechter
Affiliation:
Hahn-Meitner-Institut, dept. Solar Energetics, D-14109 Berlin, Glienicker Str. 100, Germany
K. Ellmer
Affiliation:
Hahn-Meitner-Institut, dept. Solar Energetics, D-14109 Berlin, Glienicker Str. 100, Germany
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Abstract

Aluminium-doped zinc oxide (ZnO:Al) films have been grown on c-plane (001) and a-plane (110) sapphire by RF magnetron sputtering from a ceramic target. The films grew epitaxially, even at room temperature. However, the crystalline quality depends both on the substrate temperature as well as on the sapphire orientation. The best films, proved by X-ray diffraction (rocking curves and pole figure measurements) were grown on (110)-oriented sapphire in the temperature range 473 to 773 K. The minimum rocking curve half width was about 0.75 °. By Rutherford backscattering analysis it could be shown, that the films exhibit a significant variation of the defect density over the film thickness. The highest density, as expected, is observed at the interface sapphire/ZnO:Al. Films grown on (001)-oriented sapphire have higher rocking curve half widths (about 1.3 °) and exhibit sometimes two types of domains in the same film twisted by 30 °.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 721: Symposia E/J – Texture and Microstructure in Electronic and Magnetic Films – Nanostructural Magnetic Materials for Data Storage , 2002 , J4.3
Copyright
Copyright © Materials Research Society 2002

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