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Polarization induced 2D hole gas in GaN/AlGaN heterostructures

Published online by Cambridge University Press:  17 March 2011

S. Hackenbuchner ,
J. A. Majewski ,
G. Zandler ,
O. Ambacher  and
P. Vogl
S. Hackenbuchner
Affiliation:
[email protected]
J. A. Majewski
Affiliation:
Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 3, D-85748 Garching, Germany
G. Zandler
Affiliation:
Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 3, D-85748 Garching, Germany
O. Ambacher
Affiliation:
Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 3, D-85748 Garching, Germany
P. Vogl
Affiliation:
Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 3, D-85748 Garching, Germany
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Abstract

The generation of high density 2D hole gases is crucial for further progress in the field of electronic and optoelectronic nitride devices. In this paper, we present results of C-V profiling measurements for N-face GaN/AlGaN heterostructures and systematic theoretical studies of Mg- doped GaN/AlGaN gated heterostructures and superlattices. Our calculations are based on a self- consistent solution of the multiband k.p Schrödinger and Poisson equation and reveal that the hole 2D sheet density is mainly determined by the polarization induced interface charges. For an Aluminium concentration of 30%, the induced hole density in the heterostructure can reach values up to 1.5×1013 cm−2. In the GaN/AlGaN superlattices, the hole sheet density increases with the superlattice period and saturates for a period of 40 nm at a value of 1.5×1013 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.35
Copyright
Copyright © Materials Research Society 2001

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References

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