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Polarization Dependent Conductivity in Thin Film Pzt Capacitors

Published online by Cambridge University Press:  25 February 2011

Stephen E. Bernacki
Stephen E. Bernacki*
Affiliation:
Raytheon Company, Equipment Division, 528 Boston Post Road, Sudbury, MA 01776
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Abstract

Polarization dependent conductivity is a dependence of the low field non switching steady state conduction current through a metal ferroelectric metal (MFM) thin film capacitor on the remanent polarization state of the capacitor. This paper proposes a simple theoretical model based on Schottky barrier formation due to PZT-platinum work function differences and barrier height modulation due to remanent polarization. The model predicts a conduction current dependence on both remanent polarization state and electrode material. Finally, we present experimental data in qualitative agreement with the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 135
Copyright
Copyright © Materials Research Society 1992

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