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Polarity dependence of In-rich InGaN and InN/InGaN MQWs

Published online by Cambridge University Press:  01 February 2011

Songbek Che ,
Takuro Shinada ,
Tomoyasu Mizuno ,
Yoshihiro Ishitani  and
Akihiko Yoshikawa
Songbek Che
Affiliation:
[email protected], Chiba University, Electronic and Mechanical Engineering, 1-33 Yayoi-cho, Inage-ku, Chiba, Chiba, 263-8522, Japan, 81-43-290-3332, 81-43-290-3332
Takuro Shinada
Affiliation:
[email protected]
Tomoyasu Mizuno
Affiliation:
[email protected]
Yoshihiro Ishitani
Affiliation:
[email protected]
Akihiko Yoshikawa
Affiliation:
[email protected]
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Abstract

In-rich InGaN films (XIn>0.5) and InN/InGaN multi-quantum wells were grown on Ga- and N-polarity GaN templates by radio-frequency plasma-assisted molecular beam epitaxy. The In-polarity InGaN films grown at 450°C showed superior crystalline quality and smoother surface morphology compared to the N-polarity samples, which were grown at 500∼550°C. By using the In-polarity In0.7Ga0.3N as a barrier layer, the InN/InGaN multi-quantum wells were successfully fabricated on the III-element polarity GaN templates at 450°C. Fine periodic structures and strong photoluminescence emission around optical communication wavelength were obtained from the In-polarity MQWs. These results indicate that the In-polarity growth is preferred to obtain a high quality InGaN film and the InN/InGaN MQWs in spite of its lower growth temperature.

Keywords

nitridemolecular beam epitaxy (MBE)crystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF06-03
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Yeo, W., Pharkya, A., and Eastman, L. F., Appl. Phys. Lett. 77, 2548 (2000).CrossRefGoogle Scholar
2. Inushima, T., Mumutin, V.V., Vekshin, V.A., Invanov, S.V., Sakon, T., Motokawa, M., and Ohoya, S., J. Crst. Growth 227–228, 481 (2001).CrossRefGoogle Scholar
3. Saito, Y., Teraguchi, N., Suzuki, A., Araki, T. and Nanishi, Y., Jpn. J. Appl. Phys. 40, L91 (2001).CrossRefGoogle Scholar
4. Davydov, V.Yu., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A. V., Aderhold, J., Semchinova, O., and Graul, J., Phys. Status Solidi B 229, R1 (2002).3.0.CO;2-O>CrossRefGoogle Scholar
5. Xu, K. and Yoshikawa, A., Appl. Phys. Lett. 83, 251 (2003).CrossRefGoogle Scholar
6. Ishitani, Y., Xu, K., Che, S. B., Masuyama, H., Terashima, W., Yoshitani, M., Hashimoto, N., Akasaka, K., Ohkubo, T., and Yoshikawa, A., Phys. Status Solidi. B 241, 2849 (2004).CrossRefGoogle Scholar
7. Ohashi, T., Kouno, T., Kawai, M., Kikuchi, A., Kishino, K., Phys. Status Solidi A 201, 2850 (2004).Google Scholar
8. Kurouchi, M., Naoi, H., Araki, T., Miyajima, T., Nanishi, Y., Jpn. J. Appl. Phys. 44, L230 (2005).CrossRefGoogle Scholar
9. Che, S.B., Terashima, W., Ohkubo, T., Yoshitani, M., Hashimoto, N., Akasaka, K., Ishitani, Y., Yoshikawa, A., Phys. Status Solidi C 2, 2258 (2005).CrossRefGoogle Scholar
10. Che, S.B., Terashima, W., Ishitani, Y., Matsuda, T., Isishi, H., Yoshida, S., Yoshikawa, A., Appl. Phys. Lett. 88, 261903 (2005).CrossRefGoogle Scholar
11. Terashima, W., Che, S.B., Ishitani, Y., Yoshikawa, A., Proceedings of the 6th International conference on nitride semiconductors, Bremen, Germany, Fr–G9, (2005).Google Scholar
12. Shen, X.Q., Ide, T., Shimizu, M., Okumura, H., J. Crst. Growth 237–239, 1148 (2002).CrossRefGoogle Scholar
13. Dimakis, E., Konstantinidis, G‥, Tsagaraki, K., Adikimenakis, A., lliopoulos, E., Georgakilas, A., Superlattices and Microstructures 36, 497 (2004).Google Scholar
14. Gallinat, C., Brown, J., Koblmller, G‥, Speck, J., Proceedings of the 6th International conference on nitride semiconductors, Bremen, Germany, We-G6–2, (2005).Google Scholar
15. Yamaguchi, W., Che, S.B., Kikukawa, N., Ishitani, Y., Yoshikawa, A., Proceedings of 6th International conference on nitride semiconductors, Bremen, Germany, Mo-P-064, (2005).Google Scholar