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Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  16 February 2011

R. Mih  and
R. Gronsky
R. Mih
Affiliation:
Univ. of California at Berkeley, Dept. of Materials Science and Mineral Engineering, Berkeley, CA; A. Dahlen, Forschungszentrum Jülich, Institute for Solid State Materials, Jülich, Germany; R. H. Howell, Lawrence Livermore National Laboratory, Livermore, CA; and P.A. Sterne, University of California at Davis, Department of Physics, Davis, CA.
R. Gronsky
Affiliation:
Univ. of California at Berkeley, Dept. of Materials Science and Mineral Engineering, Berkeley, CA; A. Dahlen, Forschungszentrum Jülich, Institute for Solid State Materials, Jülich, Germany; R. H. Howell, Lawrence Livermore National Laboratory, Livermore, CA; and P.A. Sterne, University of California at Davis, Department of Physics, Davis, CA.
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Abstract

Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 517
Copyright
Copyright © Materials Research Society 1995

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References

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