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Point Defects in GaAs and Other Semiconductors

Published online by Cambridge University Press:  25 February 2011

P. Ehrhart ,
K. Karsten  and
A. Pillukat
P. Ehrhart
Affiliation:
Inst, für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-5170 Jülich
K. Karsten
Affiliation:
Inst, für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-5170 Jülich
A. Pillukat
Affiliation:
Inst, für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-5170 Jülich
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Abstract

In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4.1019 e-/cm2. The irradiated samples were investigated by X-ray Diffraction and optical absorption spectrocopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (Vrel=2–3 atomic volumes) as compared to the As-Frenkel pairs (Vrel ≈ 1 at.voL). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 75
Copyright
Copyright © Materials Research Society 1993

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