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Point Defect Detector Studies of Oxidized Silicon

Published online by Cambridge University Press:  25 February 2011

H. L. Meng ,
K. S. Jones  and
S. Prussin
H. L. Meng
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S. Prussin
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

Ion implantation and thermal oxidation are device fabrication processes that lead to perturbation of equilibrium point defects concentration in silicon. This study investigates the interaction between oxidation-induced point defects and type II dislocation loops intentionally introduced in silicon via ion implantation. The type II dislocation loops were introduced via Si implants into (100) Si wafers at 50 keV to a dose ranging from 2×1015 to 1×1016/cm2. The subsequent furnace annealing at 900 °C was done for times between 30 min and 4 hr in either a dry oxygen or nitrogen ambient. Plan-view transmission electron microscopy (PTEM) was used to characterize the increase in atom concentration bound by dislocation loops as a result of oxidation. The results show type II dislocation loops can be used as point defect detector and they are efficient in measuring oxidation-induced point defects. It is also shown that the measured net interstitials flux trapped by dislocation loops is linearly proportional to the total supersaturation of interstitials as measured by oxidation enhanced diffusion (OED) studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 101
Copyright
Copyright © Materials Research Society 1992

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References

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