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P-layer Optimization in High Performance a-Si:H Solar Cells

Published online by Cambridge University Press:  01 February 2011

Yueqin Xu ,
Bill Nemeth ,
Falah Hasoon ,
Lusheng Hong ,
Anna Duda  and
Qi Wang
Yueqin Xu
Affiliation:
[email protected], NREL, Golden, Colorado, United States
Bill Nemeth
Affiliation:
[email protected], NREL, Golden, Colorado, United States
Falah Hasoon
Affiliation:
[email protected], NREL, Golden, Colorado, United States
Lusheng Hong
Affiliation:
[email protected], National Taiwan University of Science and Technology, Taipei, Taiwan, Province of China
Anna Duda
Affiliation:
[email protected], NREL, Golden, Colorado, United States
Qi Wang
Affiliation:
[email protected], NREL, Golden, Colorado, United States
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Abstract

We report our progress toward high-performance hydrogenated amorphous silicon (a-Si:H) solar cells fabricated in NREL's newly installed multi-chamber film Si deposition system. The a-Si:H layers are made by standard radio frequency plasma-enhanced chemical vapor deposition. This system produces a-Si:H p-i-n single-junction devices on Asahi U-type transparent conducting oxide glass with >10% initial efficiency. The importance of the p-layer to the cell is identified: it plays a critical role in further improving cell performance. Our optimization process involves changing p-layer parameters such as dopant levels, bandgap, and thickness in cells as well as applying a double p-layer. With the optimized p-layer, we are able to increase the fill factor of our cells to as high as 72% while maintaining high open-circuit voltage.

Keywords

amorphousphotovoltaicthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A07-15
Copyright
Copyright © Materials Research Society 2010

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