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Plasma-Induced Effects on The Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001)

Published online by Cambridge University Press:  17 March 2011

D.I. Florescu ,
Fred H. Pollak ,
William B. Lanfor ,
Farid Khan ,
I. Adesida  and
R.J. Molnar
D.I. Florescu
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
William B. Lanfor
Affiliation:
University of Illinois at Urbana-Champaign, Urbana, IL 61801
Farid Khan
Affiliation:
University of Illinois at Urbana-Champaign, Urbana, IL 61801
I. Adesida
Affiliation:
University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

We have measured high spatial/depth resolution (2-3 [.proportional]m) thermal conductivity (κk) at 300K before and after plasma-induced effects on a series of n-GaN/sapphire (0001) samples fabricated by hydride vapor phase epitaxy (HVPE) using a ThermoMicroscope'as scanning thermal microscope (SThM). The sample thicknesses were 50 ± 5 [.proportional]m and the carrier concentrations ~ 8 × 1016 cm-3, as determined by Hall effect measurements. The thermal conductivity before treatment was found to be in the 1.70 – 1.75 W/cm-K range, similar to that previously reported for HVPE material with this carrier concentration and thickness [D. I. Florescu et al., J. Appl. Phys. 88, 3295 (2000)]. The samples were processed under constant Ar gas flow and pressure fora fixed period of time (5 min). The only variable processing parameter was the DC bias voltage (125 – 500 V). After the initial 125 V procedure κ exhibited a decrease linear in the DC voltage in the investigated range. At 125 V the thermal conductivity was only slightly less (κ ~ 1.65 W/cm-K) than the untreated case. κ had dropped to ~ 0.3 W/cm-K for the 500 V situation. The implications of these results for device applications in the area of high power opto-electronics and high power electronics will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.57
Copyright
Copyright © Materials Research Society 2001

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