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Plasma-Enhanced Chemical Vapor Deposition of Metal and Metal Silicide Films

Published online by Cambridge University Press:  21 February 2011

Dennis W. Hess
Dennis W. Hess*
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720
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Abstract

Plasma-enhanced CVD (PECVD) has been widely used for the deposition of insulating and semiconducting thin films. In recent years, interest has arisen in the use of PECVD to form metal layers for barrier, contact, and interconnect applications. Plasma deposition conditions that result in the formation of conducting films of transition metals, transition metal silicides, and transition metal nitrides are discussed. Particular attention is given to the as-deposited resistivities of these films, and their relationship to the gas phase reactants. The effects of postdeposition heat treatments are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 315
Copyright
Copyright © Materials Research Society 1985

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References

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