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Plasma-Assisted MBE of GaN and AlGaN on 6H SiC(0001)

Published online by Cambridge University Press:  21 February 2011

S. Sinharoy ,
A. K. Agarwal ,
G. Augustine ,
L. B. Rowland ,
R. L. Messham ,
M. C. Driver  and
R. H. Hopkins
S. Sinharoy
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235
A. K. Agarwal
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235
G. Augustine
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235
L. B. Rowland
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235
R. L. Messham
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235
M. C. Driver
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235
R. H. Hopkins
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235
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Abstract

The growth of undoped and doped GaN and AlGaN films on off-axis 6H SiC substrates was investigated using plasma-assisted molecular beam epitaxy (MBE). Smooth and crack-free GaN and AlGaN films were obtained; the best results occurred at the highest growth temperature studied (800°C) and with a 40 to 50 nm A1N buffer layer grown at the same temperature. Carrier concentrations of up to n = 4 × 1020 cm−3 were accomplished with silicon, with a 40 to 50% activation rate as determined by secondary ion mass spectrometry (SIMS). Unintentionally doped AlxGa,.xN (x≈0.1) was n-type with a carrier concentration of 7 × 1018 cm−3. N-type AlGaN (x≈0.1)/p-type 6H SiC (0001) heterostructures showed excellent junction characteristics with leakage currents of less than 0.1 nA at 5 V reverse bias at room temperature and 0.5 nA at 200°C operating temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 157
Copyright
Copyright © Materials Research Society 1996

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References

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