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Plasma Synthesis and Surface Passivation of Silicon Quantum Dots with Photoluminescence Quantum Yields higher than 60%

Published online by Cambridge University Press:  01 February 2011

Lorenzo Mangolini ,
David Jurbergs ,
Elena Rogojina  and
Uwe Kortshagen
Lorenzo Mangolini
Affiliation:
[email protected], University of Minnesota, Mechanical Engineering, 111 Church St. SE, Minneapolis, MN, 55455, United States
David Jurbergs
Affiliation:
[email protected], Innovalight Inc., Santa Clara, 95054, United States
Elena Rogojina
Affiliation:
[email protected], Innovalight Inc., Santa Clara, 95054, United States
Uwe Kortshagen
Affiliation:
[email protected], University of Minnesota, Mechanical Engineering, 111 Church St. SE, Minneapolis, MN, 55455, United States
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Abstract

Silicon nanocrystals with diameters of less than 5 nm show efficient room temperature pho-toluminescence (PL). Previous reports of PL quantum yields for ensembles of silicon quantum dots have usually been in the few percent range, and generally less than 30%. Here we report the plasma synthesis of silicon quantum dots and their subsequent wet-chemical surface passivation with organic ligands while strictly excluding oxygen. Photoluminescence quantum yields as high as 62% have been achieved at peak wavelengths of about 789 nm.

Keywords

Siphotoemissionluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 934: Symposium I – Silicon-Based Microphotonics , 2006 , 0934-I01-04
Copyright
Copyright © Materials Research Society 2006

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