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Plasma Processing in Semiconductor Manufacturing

Published online by Cambridge University Press:  28 February 2011

Clarence J. Tracy
Clarence J. Tracy*
Affiliation:
Motorola, Process Technology Laboratory, Semiconductor Research and Development Laboratory, Phoenix, Az.85008
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Abstract

The implementation of plasma deposition and reactive ion etching into a semiconductor VLSI manufacturing process is rarely trivial.In some cases isolated process modules may appear to function well until integrated into a lengthy product flow, where interactions occur with prior or subsequent processing steps.In addition, dry processes have some unique and sometimes undesirable characteristics which need to be considered.Examples of both of these kinds of problems will be shown.Opportunities still exist for research to lead to a better understanding of mechanisms and for development work to improve the equipment and specific processes.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 35
Copyright
Copyright © Materials Research Society 1986

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References

1. Rand, M.J., J.Appl.Phys. 49 2473 (1978).Google Scholar
2. Adams, A.C., Solid State Technology 26 135 (April, 1983).Google Scholar
3. Nguyen, V.S., Burton, S., and Pau, P., J.Electrochem.Soc. 131, 2348 (1984).CrossRefGoogle Scholar
4. Moran, J.M. and Maydan, D., Bell System Technical Journal 58, 1027 (1979).CrossRefGoogle Scholar
5. Kaplan, M., Meyerhofer, D., and White, L., RCA Review 44 135 (1983).Google Scholar
6. Yamaguchi, T., Morimoto, S., Park, H K and Elden, G.C., IEEE Journal of Solid-state Circuits SC–20 104 (1985).CrossRefGoogle Scholar
7. Robb, F., Semiconductor International, pg.60 (Dec.1979).Google Scholar
8. Saia, R.J. and Gorowltz, B., J.Electrochem.Soc. 132, 1954 (1978).CrossRefGoogle Scholar
9. Schaible, P.M., Metzger, W.C., and Anderson, J.P., J.Vac.Scl.Technol., 15, 334 (1978).CrossRefGoogle Scholar
10. Butler, A.L. and Foster, D.J., IEEE Journal of Solid-state Circuits SC–20 70 (1985).CrossRefGoogle Scholar
11. Chiu, K.Y., Moll, J.L., Chami, K M. Lin, J., Laqe, C., Anuelos, S. and Tillman, R.L., IEEE Transactions on Electron Devices ED030 1506 (1983).CrossRefGoogle Scholar
12. Kasai, N., Endo, N., IshItani, A., and Kitajima, H., Proceedings of the 1985 IEDM Conference, PP.419 - 422.Google Scholar
13. Robb, F.Y., J.Electrochem.Soc. 131 2906 (1984).CrossRefGoogle Scholar
14. Lee, W-Y., Eldrldge, J.M., and Schwartz, G.C., J.Appl.Phys. 52, 2994 (1981).CrossRefGoogle Scholar
15. Kinsbron, E., Willenbrock, W.E. and Levinstein, H.J., Electrochem.Soc.Symposium Proceedings 82–7, 116 (1982).Google Scholar
16. Nagy, A.G., J.Electrochem.Soc. 132, 689 (1985).Google Scholar
17. Robb, F.Y., Proceeding of the Eleventh Annual Tegal Plasma Seminar, pp.45–51(1985)Google Scholar
18. Chin, D., Dhong, S.H., and Long, G.J., J.Electrochem.Soc. 132, 1705 (1985).CrossRefGoogle Scholar
19. Herb, G.K. Caffrey, R.E., Eckroth, E.T., Jarrett, Q.T., Fraust, C.L., Fulton, J.A., Solid State Technology 26, 185 (August 1983).Google Scholar
20. Tolliver, D.L. (private communication).Google Scholar