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Plasma Ion Implantation for Flat Panel Displays

Published online by Cambridge University Press:  03 September 2012

Chung Chan
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Shu Qin
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Yuanzhong Zhou
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Wei Liu
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Shuichi Wu
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Mankuan Michael Vai
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, [email protected]
Ionel Bursuc
Affiliation:
Waban Technology, Inc., One DeAngelo Drive, Bedford, MA 01730
Jiqun Shao
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
Stuart Denholm
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
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Abstract

Development of ion doping and hydrogenation equipment using plasma ion implantation (PII) is being studied. It is shown that low energy, high throughput operation could eliminate problems associated with etching, charging, cooling, and contamination. The applications of a new plasma source and neural network implementation optimization are also reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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