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Plasma Immersion Surface Modification With Metal Ion Plasma

Published online by Cambridge University Press:  16 February 2011

I. G. ,
X. Godechot  and
K. M. Yu
I. G.
Affiliation:
Lawrence Berkeley Laboratory University of California erkeley, CA 94720
X. Godechot
Affiliation:
Lawrence Berkeley Laboratory University of California erkeley, CA 94720
K. M. Yu
Affiliation:
Lawrence Berkeley Laboratory University of California erkeley, CA 94720
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Abstract

We describe here a novel technique for surface modification in which a metal plasma is employed and by which various blends of plasma deposition and ion implantation can be obtained. The new technique is a variation of the plasma immersion technique described by Conrad and co-workers. When a substrate is immersed in a metal plasma, the plasma that condenses on the substrate remains there as a film, and when the substrate is then implanted, qualitatively different processes can follow, including ‘conventional’ high energy ion implantation, recoil implantation, ion beam mixing, ion beam assisted deposition, and metallic thin film and multilayer fabrication with or without species mixing. Multiple metal plasma guns can be used with different metal ion species, films can be bonded to the substrate through ion beam mixing at the interface, and multilayer structures can be tailored with graded or abrupt interfaces. We have fabricated several different kinds of modified surface layers in this way.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 371
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. See, for instance, “Ion Implantation and Plasma Assisted Processes”, edited by Hochman, R. F., Solnick-Legg, H. and Legg, K. O., (ASM, Ohio, 1988).Google Scholar
2. “Plasma Processing and Synthesis of Materials”, edited by Apelian, D. and Szekely, J., Mat. Res. Soc. Symp. Proc. Vol 98, (MRS, Pittsburgh, 1987).Google Scholar
3. Dearnaley, G., Nucl. Instr. and Meth.,B5Q, 358 (1990).Google Scholar
4. Iwaki, M., Critical Rev. in Solid State and Mat. Sci., 15,473 (1989).Google Scholar
5. Rehn, L. E. and Okamoto, P. R., Nucl. Instr. and Meth. B39, 104 (1989).Google Scholar
6. Ensinger, W. and Wolf, G. K., in Proc. 7th Int. Conf. on Ion Beam Modification of Materials, Knoxville, Tenn, Sep 1990, to be published in Nucl. Instr. and Meth. B, 1991.Google Scholar
7. Conrad, J. R., J. Appl. Phys. 62, 777 (1987).Google Scholar
8. Conrad, J. R., Radtke, J. L., Dodd, R. A., Worzala, F. J. and Tran, N. C., J. Appl. Phys. 62, 4591 (1987).Google Scholar
9. Scheuer, J. T., Shamim, M. and Conrad, J. R., J. Appl. Phys. 67, 1241 (1990).Google Scholar
10. Conrad, J. R., Mat. Sci. & Eng. A116, 197 (1989).Google Scholar
11. Tendys, J., Donnelly, I. J., Kenny, M. J. and Pollock, J. T. A., Appl. Phys. Lett. 53, 2143 (1988).Google Scholar
12. Collins, G. A., Hutchings, R. and Tendys, J., 2nd Int'l Conf on Plasma Surface Engineering, Garmisch-Partenkirchen, Germany, Sep 10–14, 1990.Google Scholar
13. Wong, H., Qian, X. Y., Carl, D., Cheung, N. W., Lieberman, M. A., Brown, I. G. and Yu, K. M., Mat. Res. Soc. Symp. Proc. 141, 91, (MRS, Pittsburgh, 1989).Google Scholar
14. Qian, X. Y., Wong, H., Carl, D., Cheung, N. W., Lieberman, M. A., Brown, I. G. and Yu, K. M., 176th Electrochemical Society Meeting, Hollywood, Fla, October 15–20, 1989.Google Scholar
15. Qian, X. Y., Kiang, M. H., Huang, J., Carl, D., Cheung, N. W., Lieberman, M. A., Brown, I. G., Yu, K. M. and Current, M. I., in Proc. 8th Int. Conf. on Ion Implantation Technology, Guildford, U.K., July 1990, to be published in Nucl. Instr. and Meth. B, (1991).Google Scholar
16. Cheung, N. W., in Proc. 8th Int. Conf. on Ion Implantation Technology, Guildford, U.K., July 1990, to be published in Nucl. Instr. and Meth. B, 1991).Google Scholar
17. Brown, I. G., Godechot, X. and Yu, K. M., Appl. Phys. Letters 58, 1392 (1991).Google Scholar
18. Godechot, X., Salmeron, M. B., Ogletree, D. F., Galvin, J. E., MacGill, R. A., Yu, K. M. and Brown, I. G., Materials Research Society Spring Meeting, San Francisco, CA, April 16–21, 1990; to be published in MRS Symp. Proc., “Plasma Processing and Synthesis of Materials”.Google Scholar
19. Brown, I. G., Feinberg, B. and Galvin, J. E., J. Appl. Phys. 63, 4889 (1988).Google Scholar
20. Brown, I. G. and Godechot, X., 14th International Symposium on Discharges and Electrical Insulation in Vacuum, Santa Fe, NM, September 16–20, 1990; to be published in IEEE Trans. Plasma Sci. Google Scholar
21. See, for instance, Chen, F. F. in “Plasma Diagnostic Techniques”, edited by Huddlestone, R. H. and Leonard, S. L. (Academic Press, N. Y., 1965).Google Scholar
22. Ziegler, J. F., Biersack, J. P. and Littmark, U., in “The Stopping and Range of Ions in Solids”, Vol 1, edited by Ziegler, J. F. (Pergamon, N.Y., 1985).Google Scholar