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Plasma Etching of PLT Thin Films and Bulk PLZT Using Fluorine- and Chlorine-Based Gases

Published online by Cambridge University Press:  16 February 2011

M. R. Poor ,
A. M. Hurd ,
C. B. Fleddermann  and
A. Y. Wu
M. R. Poor
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM. 87131.
A. M. Hurd
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM. 87131.
C. B. Fleddermann
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM. 87131.
A. Y. Wu
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM. 87131.
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Abstract

Potential applications for ferroelectric thin films include both electronic and optoelectronic devices. In order to integrate a large number of devices on a single ceramic film or to incorporate ceramic devices with silicon-based integrated circuits, suitable film patterning techniques must be developed. In this study, the use of plasma etching for device patterning of PLT thin films has been explored using a dc hollow cathode discharge with HCl and CF4 etching gases. At room temperature, no etching of material is discernable. As the substrate temperature is increased, however, relatively rapid etching takes place. Etch rates for PLT thin films as high as 6500 Å/hour were measured. Etching occurred in both chlorinated and fluorinated plasmas, but at considerably different rates. The etch rate is enhanced by a factor of six by using a combination of HCl and CF4 in the plasma. After etching, the stoichiometry of the film, measured by energy dispersive spectroscopy (EDS), varied greatly with changes in substrate temperature. Although the removal rate for each element is different, all traces of lead, titanium, and lanthanum can be removed from the substrate over a wide range of plasma etching conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 211
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Higuma, Y., Matsui, Y., Okuyama, M., Nakagawa, T., and Hamakawa, Y., Jap. J. Appl. Phys. Suppl. 17–1, 209 (1978).Google Scholar
2. Higashino, H., Kawaguchi, T., Adachi, H., Makino, Y., and Yamazaki, O., Jap. J. Appl. Phys. Suppl. 24–2, 284 (1985).Google Scholar
3. Kawaguchi, T., Adachi, H., Setsune, K., Yamazaki, O., and Wasa, K., Applied Optics 23, 2187 (1984).Google Scholar
4. Nakata, H., Tanabe, M., Utsumi, K., Higashino, H., Adachi, H., Yamazaki, O., Fujito, K., National Technical Report 33, 27 (1987) (in Japanese).Google Scholar
5. Trolier, S., Gelst, C., Safari, A., Newham, R. E., and Xu, Q. C., in Proc. Sixth IEEE Int. Symp. on Appl. of Ferroelectrics, Bethlehem, PA., June 1986, p. 707.Google Scholar
6. Shiosaki, T., Matsuda, H., Adachi, M., Kawabata, A., Jap. J. Appi. Phys. Suppl. 26–2, 159 (1987).Google Scholar
7. Eyett, M., Bauerle, D., Wersing, W., and Thomann, H., J. Appl. Phys. 62, 1511 (1987).Google Scholar
8. Lee, S., Esener, S., Title, M., Drabik, T., Optical Engineering 21, 250 (1986).Google Scholar