Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T07:44:41.050Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Effects on Thin Film Microstructure

Published online by Cambridge University Press:  15 February 2011

Munir D. Naeem ,
Stephen M. Rossnagel  and
Krishna Rajan
Munir D. Naeem
Affiliation:
IBM Microelectronics Division, Hopewell Jn., NY 12533 Materials Engineering Dept., Rensselaer Polytechnic Institute, Troy, NY 12180
Stephen M. Rossnagel
Affiliation:
T.J. Watson Research Center, IBM Research Division, Yorktown Heights, NY 10598
Krishna Rajan
Affiliation:
Materials Engineering Dept., Rensselaer Polytechnic Institute, Troy, NY 12180
Get access

Abstract

We have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (∼50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were studied using Transmission Electron Microscopy (TEM).

Grain growth is observed in thin Cu films when the films are exposed to low energy (87 eV) Ar plasmas. The microstructural changes in sputtered and evaporated films are quite significant whereas the plasma bombardment has less effect on CVD films. These changes occur very rapidly and cannot be attributed solely to the thermal effects, especially at low RF power levels (500 W). The initial microstructure of the film has a significant effect on grain growth during plasma exposure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 113
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ohmi, T., Otsuki, M., Takewaki, T. and Shibata, T., J. Electrochem. Soc., Vol: 139, No: 3, 922 (1992)Google Scholar
2 Lin, T. and Raman, V., Mat. Res. Soc. Symp. Proc., Vol: 226, 203 (1991)Google Scholar
3 Walton, D. T., Frost, H. J. and Thompson, C. V., Mat. Res. Soc. Symp. Proc., Vol:225, 219 (1991)Google Scholar
4 Auciello, O. in Ion Bombardment Modification of Surfaces: Fundamental and Applications, edited by: Auciello, O. and Kelly, R., Elsevier, New York (1984)Google Scholar
5 Wilson, I. H., Belson, J. and Auciello, O. in Ion Bombardment Modification of Surfaces: Fundamental and Applications, edited by: Auciello, O. and Kelly, R., Elsevier, New York (1984)Google Scholar
6 Rossnagel, S. M., Robinson, R. S. and Kaufman, H. R., Surface Science, Vol: 123, 89 (1982)Google Scholar
7 Liu, J. C., Li, J. and Mayer, J. W., J. Appl. Phys., 67 (5), 2354 (1990)Google Scholar
8 Atwater, H. A., Thompson, C. V. and Smith, H. I., J. Appl. Phys., Vol: 64, 2337 (1988)Google Scholar
9 Naeem, M. D., Leary, H. J. and Rajan, K., J. Electronic Mat., Vol: 21, No: 12, 1087 (1992)Google Scholar
10 Trade Mark product of Omega Engineering, Stamford Connecticut.Google Scholar
11 Naeem, M. D., Ph.D. Thesis, Rensselaer Polytechnic Institute, Troy, NY (1993)Google Scholar
12 Gupta, J., Harper, J. M. E., Mauer, J. L. IV, Blauner, P. G. and Smith, D. A., Appl. Phys. Lett., Vol: 61, 663 (1992)CrossRefGoogle Scholar
13 Rollett, A. D., Srolovitz, D. J. and Anderson, M. P., Acta Met., Vol: 37, 1227 (1989)CrossRefGoogle Scholar
14 Thompson, C. V., J. Appl. Phys., 58 (2), 763 (1985)CrossRefGoogle Scholar
15 Floro, J. A. and Thompson, C. V., Acta metall. mater., Vol: 41, No: 4, 1137 (1993)CrossRefGoogle Scholar