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Plasma Chemistry Dependent ECR Etching of GaN

Published online by Cambridge University Press:  21 February 2011

R. J. Shul ,
C. I. H. Ashby ,
D. J. Rieger ,
A. J. Howard ,
S. J. Pearton ,
C. R. Abernathy ,
C. B. Vartuli ,
P. A. Barnes  and
P. Davis
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
C. I. H. Ashby
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
D. J. Rieger
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
A. J. Howard
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Gainesville, FL 32611
P. A. Barnes
Affiliation:
Auburn University, Auburn, AL 36849
P. Davis
Affiliation:
Auburn University, Auburn, AL 36849
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Abstract

Electron cyclotron resonance (ECR) etching of GaN in Cl2/H2/Ar, Cl2/SF6/Ar, BCl3/H2Ar and BCl3/SF6/Ar plasmas is reported as a function of percent H2 and SF6. GaN etch rates were found to be 2 to 3 times greater in Cl2/H2/Ar discharges than in BCl3/H2/Ar discharges independent of the H2 concentration. In both discharges, the etch rates decreased as the H2 concentration increased above 10%. When SF6 was substituted for H2, the GaN etch rates in BCl3-based plasmas were greater than those for the Cl2-based discharges as the SF6 concentration increased. GaN etch rates were greater in Cl2/H2/Ar discharges as compared to Cl2/SF6/Ar discharges whereas the opposite trend was observed for BCl3,-based discharges. Variations in surface morphology and near-surface stoichiometry due to plasma chemistries were also investigated using atomic force microscopy and Auger spectroscopy, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 751
Copyright
Copyright © Materials Research Society 1996

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References

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