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Planarization Materials for Active Matrix Thin Film Transistor Arrays

Published online by Cambridge University Press:  01 February 2011

Ahila Krishnamoorthy
Affiliation:
[email protected], Honeywell, Sunnyvale, CA, 94089, United States
Richard Spear
Affiliation:
[email protected], Honeywell, Sunnyvale, CA, 94089, United States
Amanuel Gebrebrhan
Affiliation:
[email protected], Honeywell, Sunnyvale, CA, 94089, United States
Mehari Stifanos
Affiliation:
[email protected], Honeywell, Sunnyvale, CA, 94089, United States
Hai Bien
Affiliation:
[email protected], Honeywell, Sunnyvale, CA, 94089, United States
Marie Lowe
Affiliation:
[email protected], Honeywell, Chandler, AZ, 85226, United States
Deborah yellowaga
Affiliation:
[email protected], Honeywell, Chandler, AZ, 85226, United States
Peter Smith
Affiliation:
[email protected], Honeywell, Morristown, NJ, 07962, United States
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Abstract

Traditional plasma based dielectric films are conformal and cost-prohibitive for large displays. Solution based dielectrics are planarizing in nature and provide a flat surface for indium tin oxide (ITO) layer with the resultant uniform liquid crystal response throughout the pixel. In this paper, we present the display-related material properties and integration results obtained by using a solution-based organosilsesquioxane material. The material exhibits extremely high transmittance and planarization, low outgassing, high resistance to moisture absorption and diffusion, good adhesion to other layers integrated with it and ease of integration.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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