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Planar and Curved Defects in Aluminum Nitride: Their Microstructure and Microchemistry

Published online by Cambridge University Press:  21 February 2011

Alistair D. Westwood  and
Michael R. Notis
Alistair D. Westwood
Affiliation:
Department of Materials Science & Engineering, Whitaker Lab #5, Lehigh University, Bethlehem, PA 18015
Michael R. Notis
Affiliation:
Department of Materials Science & Engineering, Whitaker Lab #5, Lehigh University, Bethlehem, PA 18015
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Abstract

The microstructure and microchemistry of planar and curved defects in Aluminum Nitride (AIN) has been investigated using Conventional Transmission Electron Microscopy (CTEM), Convergent Beam Electron Diffraction (CBED), and Analytical Electron Microscopy (AEM) techniques. Both defect morphologies were identified as Inversion Domain Boundaries (IDB). Microchemical analysis revealed oxygen segregation to the planar faults; when present on the curved defects, oxygen was at a lower concentration than in the planar defect case. Annealing experiments on defect containing AIN support our microchemical analysis of oxygen segregation. A proposed model for the formation of these two types of boundaries is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 265
Copyright
Copyright © Materials Research Society 1990

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