Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-05T05:51:48.370Z Has data issue: false hasContentIssue false
  • English
  • Français

Piezoresponse Force Microscopy Characterization of PTO Thin Films

Published online by Cambridge University Press:  31 January 2011

Alessio Morelli ,
Sriram Venkatesan ,
George Palasantzas ,
Bart J. Kooi  and
Jeff De Hosson
Alessio Morelli
Affiliation:
[email protected], Zernike Institute for Advanced Materials, Applied Physics, Groningen, Netherlands
Sriram Venkatesan
Affiliation:
[email protected], Zernike Institute for Advanced Materials, Applied Physics, Groningen, Netherlands
George Palasantzas
Affiliation:
[email protected], Zernike Institute for Advanced Materials, Applied Physics, Groningen, Netherlands
Bart J. Kooi
Affiliation:
[email protected], Zernike Institute for Advanced Materials, Applied Physics, Groningen, Netherlands
Jeff De Hosson
Affiliation:
[email protected], Zernike Institute for Advanced Materials, Applied Physics, Groningen, Netherlands
Get access

Abstract

The piezoelectric properties of PTO thin films grown by pulsed laser deposition are investigated with piezoresponse force microscopy and transmission electron microscopy. The as-grown films exhibit upward polarization, and inhomogeneous distribution of piezoelectric characteristics. The data obtained reveal imprint during piezoresponse force microscopy measurements, nonlinearity in the piezoelectric deformation, and limited retention loss. Moreover, transmission electron microscopy shows the presence of defects near the film/substrate interface, which can be associated with the variations of piezoelectric properties.

Keywords

piezoresponsedefectsferroelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1186: Symposium JJ – Nanoscale Electromechanics and Piezoresponse Force Microscopy of Inorganic, Macromolecular and Biological Systems , 2009 , 1186-JJ04-03
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kholkin, A. L., Kalinin, S. V., Roelofs, A. and Gruverman, A., Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale ed. Kalinin, S. V. and Gruverman, A. (2007 New York: Springer) pp.173–214 10.1007/978-0-387-28668-6_7Google Scholar
2. Kholkin, A. L., Shvartsman, V. V., Kiselev, D. A., Bdikin, I. K., Ferroelectrics 341, 3 (2006)10.1080/00150190600889304Google Scholar
3. Nagarajan, V., Roytburd, A., Stanishevsky, A., Prasertchoung, S., Zhao, T., Chen, L., Melngailis, J., Auciello, O., Ramesh, R., Nature materials 2, 43 (2003)10.1038/nmat800Google Scholar
4. Kighelman, Z., Damjanovic, D., Cantoni, M. and Setter, N., J. Appl. Phys. 91, 1495 (2001)10.1063/1.1431432Google Scholar
5. Kim, Y. K., Kim, S. S., Shin, H., Baik, S., Appl. Phys. Lett. 84, 255085 (2004)Google Scholar
6. Ahn, W. S., Jung, W. W., and Choi, S. K., Cho, Y., Appl. Phys. Lett. 88, 082902 (2006)10.1063/1.2178417Google Scholar
7. Gruverman, A., Tokumoto, H., Prakash, A. S., Aggarwal, S., Yang, B., Wuttig, M., Ramesh, R., Auciello, O., and Venkatesan, T., Appl. Phys. Lett. 71, 3492 (1997)10.1063/1.120369Google Scholar
8. Venkatesan, Sriram, Vlooswijk, A., Kooi, B. J., Morelli, A., Palasantzas, G., Noheda, B., and Hosson, J. Th. M. De, Phys. Rev. B 78, 104112–1 (2008)10.1103/PhysRevB.78.104112Google Scholar
9. Harnagea, C., Pignolet, A., Alexe, M., Hesse, D., Gösele, U., Appl. Phys. A 70, 1 (2000)10.1007/s003390050045Google Scholar
10. Mabud, S. A. , Glazer, A. M., J. Appl. Cryst. 12, 49 (1979)10.1107/S0021889879011754Google Scholar
11. Jones, C.W., Battle, P.D., Lightfoot, P., Harrison, W.T.A., Acta Cryst. C 45, 365 (1989)10.1107/S0108270188012077Google Scholar
12. Vrejoiu, I., Rhun, G. Le, Pintilie, L., Hesse, D., Alexe, M., Gösele, U., Adv. Mat. 18, 1657 (2006)10.1002/adma.200502711Google Scholar
13. Jungk, T., Hoffmann, A., and Soergel, E., Appl. Phys. A 86, 353 (2007)10.1007/s00339-006-3768-9Google Scholar
14. Zhang, Q. M., Wang, H., Kim, N. and Cross, L. E., J. Appl. Phys. 75, 454 (1994)10.1063/1.355874Google Scholar
15. Damjanovic, D., J. Appl. Phys. 82, 1788 (1997)10.1063/1.365981Google Scholar
16. Trolier-McKinstry, S., Gharb, N. Bassiri, Damjanovic, D., Appl. Phys. Lett. 88, 202901 (2006)10.1063/1.2203750Google Scholar
17. Shvartsman, V. V., Pertsev, N. A., Herrero, J. M., Zaldo, C. and Kholkin, A. L., J. Appl. Phys. 97, 104105 (2005)10.1063/1.1891273Google Scholar
18. Morita, T., Cho, Y, J. Korean Phys. Soc. 46, 10 (2005)Google Scholar
19. Gruverman, A., Tanaka, M., J. Appl. Phys. 89, 1836 (2001)10.1063/1.1334938Google Scholar