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Piezoresistance Gauge Factors in Heavily Boron-Doped Polysilicon from Infrared Piezoreflectance

Published online by Cambridge University Press:  15 February 2011

J. Cali ,
E. Bustarret ,
P. Kleimann ,
M. Le Berre  and
D. Barbier
J. Cali
Affiliation:
LEPES-CNRS, 25 av. des Martyrs, BP 166, F-38042 Grenoble Cedex 9, France.
E. Bustarret
Affiliation:
LEPES-CNRS, 25 av. des Martyrs, BP 166, F-38042 Grenoble Cedex 9, France.
P. Kleimann
Affiliation:
LEPES-CNRS, 25 av. des Martyrs, BP 166, F-38042 Grenoble Cedex 9, France.
M. Le Berre
Affiliation:
LPM-INSA, 20 av. Albert Einstein, 69621 Villeurbanne Cedex
D. Barbier
Affiliation:
LPM-INSA, 20 av. Albert Einstein, 69621 Villeurbanne Cedex
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Abstract

Heavily boron-doped (4×1019 < [B] >1021 cm-3) polycrystalline silicon thin films on oxidized silicon cantilevers were studied by FTIR spectroscopy. The experimental reflectance spectra (400–7000 cm-l) were compared to those expected for a poly-Si/SiO2/c-Si/SiO2 multilayer where the doped layer is described by a simple Drude model. The resulting free carrier concentration and conductivity were checked against electrical measurements.

The optical response of the polycrystalline layer in the medium infrared range (400–3000 cmn−1) was shown to be affected by a static uniaxial stress applied along the film plane by a four point bending mechanical device. The resulting microscopic piezoresistivity longitudinal gauge factors in the 15 - 25 range are in close agreement with those deduced from conventional electrical piezoresistivity measurements on sub-millimeter size patterns. The effective range of applicability of this contactless method and the potential application of such layers to temperature-independent miniature pressure sensors are discussed

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 609
Copyright
Copyright © Materials Research Society 1996

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