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Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

Published online by Cambridge University Press:  15 February 2011

C. Wetzel ,
T. Takeuchi ,
H. Amano  and
I. Akasaki
C. Wetzel
Affiliation:
High Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Takeuchi
Affiliation:
High Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
H. Amano
Affiliation:
High Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
I. Akasaki
Affiliation:
High Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Abstract

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.66
Copyright
Copyright © Materials Research Society 1999

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