Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-19T04:42:27.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Picosecond Photon-Solid Interaction Phase Transition in Silicon

Published online by Cambridge University Press:  25 February 2011

A.M. Malvezzi ,
H. Kurz  and
N. Bloembergen
A.M. Malvezzi
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. USA
H. Kurz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. USA
N. Bloembergen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. USA
Get access

Abstract

Four different regimes of photoelectric emission are observed over a vide fluence range of UV-laser pulses irradiating single-crystal silicon samples. The role of the electron-hole plasma in the nonlinear photoemission is demonstrated by temporal correlation measurements. A regime where ion thermal evaporation processes take place is observed above the critical fluence for melting. At higher laser fluences nonlinear ion acceleration is demonstrated by direct time-of-flight measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 75
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Liu, J.M., Kurz, H. and Bloembergen, N.. Appl. Phys. Letters 41, 693 (1982)Google Scholar
[2] Lompre, L.A., Liu, J.M., Kurz, H. and Bloembergen, N., Appl. Phys. Letters 44, 3. (1984)Google Scholar
[3] Shank, C.V.. Yen, R., and Hirlimann, C.. Phys. Rev. Letters, 50, 454. (1983)Google Scholar
[4] Shank, C.V., Yen, R. and Hirlimann., C. Mat. Res. Soc.Symp. Proc. 23, 53 (1984)Google Scholar
[5] Bensoussan, M., Moison, J.M., , BStoeszandCSebenne, Phys.Rev.B 23, 992 (1981)Google Scholar
[6] Malvezzi, A.M., Liu, J.M. and Bloembergen, N.. Mat. Res Soc. Sym Proc. 23, 135 (1984)Google Scholar
[7] Liu, J.M., Kurz, H. and Bloembergen, N., Mat. Res. Soc. Symp. Proc. 4, 23 (1982)Google Scholar
[8] Bechtel, J.M.. J.Appl. Phys. 46, 7585 (1975)Google Scholar
[9] Yoffa, E., Phys. Rev. B 21, 2415 (1980)Google Scholar
[10] Kurz, H., Malvezzi, A.M.. Lompre, L.A.. Proc. of the 17th International Conference on the Physics of Semiconductors. S.Francisco. Ca. August 1984 Google Scholar
[11] Malvezzi, A.M.. Kurz, H. and Bloembergen, N.. to be published in Appl. Phys. A Google Scholar
[12] Dresser, M.J..J.Appl. Phys. 39, 338(1968)Google Scholar