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Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

Published online by Cambridge University Press:  15 February 2011

Shangli Wu ,
Richard T. Webster  and
A. F. M. Anwar
Shangli Wu
Affiliation:
Electrical and Systems Engineering Department, University of Connecticut, Storrs, CT 06269-2157
Richard T. Webster
Affiliation:
Electromagnetics Technology Division, Air Force Research Laboratory Hanscom AFB, MA 01730
A. F. M. Anwar
Affiliation:
Electrical and Systems Engineering Department, University of Connecticut, Storrs, CT 06269-2157
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Abstract

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson's equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.58
Copyright
Copyright © Materials Research Society 1999

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References

[1]. Binari, S. C., Redwing, J. M., Kelner, G. and Kruppa, W., Electron. Lett., vol. 33, No. 3, p. 242, 1997.Google Scholar
[2]. Binari, S. C., Electrochem. Soc. Proc., 95–21, p. 136, 1995.Google Scholar
[3]. Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahoujja, M., Newrock, R. S. and Mitchel, W. C., Appl. Phys. Lett., vol. 69, p. 963, 1996 Google Scholar
[4]. Asbeck, P. M., Yu, E. T., Lau, S. S., Sullivan, G. J., Hove, J. Van and Redwing, J., Electron. Lett., p. 241, Aug. 1997.Google Scholar
[5]. Webster, R. T. and Anwar, A.F.M., MRS Proc. vol. 428, p.929, 1997.Google Scholar
[6]. Khan, M. A., Chen, Q., Shur, M. S., Dermott, B. T. and Higgins, J. A., IEEE Electron Dev. Lett., vol. 17, No.7, p. 325, 1996.Google Scholar
[7]. Shur, M. S. and Khan, M. A., MRS Bull., p. 44, Feb., 1997 Google Scholar
[8]. Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahoujja, M., Newrock, R. S. and Mitchel, W. C., Appl. Phys. Lett., vol. 69, p. 963, 1996 Google Scholar
[9]. Strite, S. and Morkoc, H., J. Vac. Sci. Technol., vol. B 10, No. 4, p. 1237, 1992.Google Scholar