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Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD
Published online by Cambridge University Press: 21 February 2011
Abstract
Experimental results on a systematic investigation on the elemental composition, structural, optical and electrical properties of undoped and doped microcrystalline silicon carbide films deposited by Plasma Enhanced Chemical Vapor Deposition.
The doped samples show high values of dark conductivity accompanied by good optical properties so to satisfy the requirements for heterojunction window material.
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- Copyright © Materials Research Society 1991
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