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Phototransport Properties of a-SiC:H Alloys
Published online by Cambridge University Press: 15 February 2011
Abstract
We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.
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- Copyright © Materials Research Society 1995