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Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

K. Yang ,
R. Zhang ,
Y. D. Zheng ,
L. H. Qin ,
B. Shen ,
H. T. Shi ,
Z. C. Huang  and
J. C. Chen
K. Yang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
Y. D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
L. H. Qin
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
H. T. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
Z. C. Huang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228–5398, USA
J. C. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228–5398, USA
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Abstract

Photoreflectance was used to study the optical properties of single crystal hexagonal GaN film on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined as 3.400 eV, and the possible origin of the PR signal was attributed to the modulation of the surface field and lineshape broadening of defects. Optical absorption and cathodoluminescence of the GaN sample were measured, and the optical absorption edge of 3.39 eV and the cathodoluminescence emission peak of 3.461 eV at low temperature (15.6K) confirmed the results of Photoreflectance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 735
Copyright
Copyright © Materials Research Society 1996

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