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Photoreflectance Characterization of InGaAs Lattice Matched to InP

Published online by Cambridge University Press:  22 February 2011

V. Bellani ,
M. Amiotti ,
M. Geddo ,
G. Guizzetti  and
G. Landgren
V. Bellani
Affiliation:
Università di Pavia, Dipartimento di Fisica “A. Volta”, Via Bassi 6, I-27100 Pavia, Italy
M. Amiotti
Affiliation:
Università di Pavia, Dipartimento di Fisica “A. Volta”, Via Bassi 6, I-27100 Pavia, Italy
M. Geddo
Affiliation:
Università di Pavia, Dipartimento di Fisica “A. Volta”, Via Bassi 6, I-27100 Pavia, Italy
G. Guizzetti
Affiliation:
Università di Pavia, Dipartimento di Fisica “A. Volta”, Via Bassi 6, I-27100 Pavia, Italy
G. Landgren
Affiliation:
Royal Institute of Technology, Semiconductor Laboratory, Electrum 229, S-16440 Kista, Sweden
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Abstract

We measured photoreflectance (PR) spectra at different temperatures between 80 and 300 K, and optical absorption (OA) at 3 K on MOVPE grown Inl-xGaxAs nearly lattice-matched to InP. x-ray diffraction measurements gave a lattice mismatch δa/ao = -0.9.10−3 between ternary alloy and InP, corresponding to × = 0.485. We obtained the energy gap dependence on T from PR spectra. The blue shift of the gap was accounted for in terms of compositional difference with respect to the perfectly lattice matched alloy (× = 0.472), and elastic strain; moreover PR and OA showed evidence of the valence bands splitting at k = 0 due to interfacial strain, in fine agreement with theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 225
Copyright
Copyright © Materials Research Society 1994

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