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Photoluminescence Study of Plastically Deformed GaN

Published online by Cambridge University Press:  01 February 2011

I. Yonenaga ,
H. Makino ,
S. Itoh ,
T. Goto  and
T. Yao
I. Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Katahira, Sendai 980–8577, Japan
H. Makino
Affiliation:
Institute for Materials Research, Tohoku University, Katahira, Sendai 980–8577, Japan
S. Itoh
Affiliation:
Institute for Materials Research, Tohoku University, Katahira, Sendai 980–8577, Japan
T. Goto
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Sendai 980–8578, Japan
T. Yao
Affiliation:
Center for Interdisciplinary Research, Tohoku University, Aramaki, Sendai 980–8578, Japan
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Abstract

We report the photoluminescence characteristics of fresh dislocations introduced by the plastic deformation in GaN bulk crystals. GaN crystals prepared from free standing wafers grown by the HVPE technique were compressed plastically at 900 to 1000°C. In the deformed crystals (a/3) (1120) dislocations on the (1110) prismatic plane, corresponding to the so-called threading dislocations, were observed in TEM. In the PL studies at 11K the intensity of the near band-edge luminescence decreased drastically in the deformed GaN by about 1/12 than that of the as-grown GaN, which seems to imply the introduction of a high density of non-radiative reco!m bination centers into GaN! during the plastic deformation. By the plastic deformation the yellow band luminescence decreased remarkably meanwhile the red band and other new luminescence developed relatively. It is found that dislocations do not originate to the yellow luminescence but the red luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E5.11
Copyright
Copyright © Materials Research Society 2005

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References

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