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Photoluminescence Study of Li-implantation into ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

T. Yasuda ,
M. K. Jin ,
J. Gaines  and
J. L. Merz
T. Yasuda
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
M. K. Jin
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
J. Gaines
Affiliation:
Philips Laboratories, 345 Scarborough Road Briarcliff Manor, New York 10516
J. L. Merz
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

Lithium ion-implantation was performed on ZnSe layers which were grown on GaAs substrates by MBE. Strong photoluminescence emission due to acceptor-bound excitons was observed from samples implanted with lithium doses of up to 1015cm−2 and annealed under optimized conditions for rapid thermal annealing. Lithium implantation results in low damage to the ZnSe as well as the formation of a shallow acceptor level. Thermal degradation of both implanted and unimplanted epilayers caused by the rapid thermal annealing was inviestigated at various annealing temperatures. We find that, under certain annealing conditions, unimplanted samples show greater thermal degradation than lithium implanted samples. The photoluminescence spectrum of an unimplanted sample annealed at 800°C shows considerable degradation; however, a lithium-implanted sample annealed at the same temperature still shows strong luminescence in the excitonic region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 333
Copyright
Copyright © Materials Research Society 1992

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References

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