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Photoluminescence Studies of Impurities and Defects in Mercuric Iodide

Published online by Cambridge University Press:  25 February 2011

X.J. Bao ,
T.E. Schlesinger ,
R.B. James ,
A.Y. Cheng  and
C. Ortale
X.J. Bao
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Pittsburgh, PA 15213
T.E. Schlesinger
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Pittsburgh, PA 15213
R.B. James
Affiliation:
Sandia National Laboratories, Advanced Materials Division, Livermore, CA 94450
A.Y. Cheng
Affiliation:
EG&G Energy Measurements, Inc., Goleta, CA 93116
C. Ortale
Affiliation:
EG&G Energy Measurements, Inc., Goleta, CA 93116
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Abstract

We have studied the effects of chemical etching in potassium iodide(KI) aqueous solution, vacuum exposure and bulk heating on the photoluminescence(PL) spectra of mercuric i0dide(HgI2). Different contact materials deposited onto HgI2 were also investigated, such as Pd, Cu, Al, Ni, Sn, In, Ag and Ta. These processing steps and the choice of a suitable electrode material are very important in the manufacturing of high-quality mercuric iodide nuclear detectors. Comparisons are made between the front surface photoluminescence and transmission photoluminescence spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 1027
Copyright
Copyright © Materials Research Society 1990

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References

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