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Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures

Published online by Cambridge University Press:  21 February 2011

J.P. Bergman ,
T. Lundström ,
B. Monemar ,
H. Amano  and
I. Akasaki
J.P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S - 58183 Linköping, Sweden. [email protected].
T. Lundström
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S - 58183 Linköping, Sweden. [email protected].
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S - 58183 Linköping, Sweden. [email protected].
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
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Abstract

We report low temperature photoluminescence (PL) spectra related to a two-dimensional electron gas confined at a GaN/AlGaN heterointerface. The recombination between electrons confined in the bottom of the interface potential and photoexcited holes causes a broad PL emission about 50 meV below the bulk GaN exciton emission. A second emission, attributed to the recombination of electrons in the first excited level at the interface, is also observed close to the excitonic band gap in GaN. The data agrees with a self consistent calculation of the energy levels and the electron concentration at the interface. Similar PL data from a modulation doped AlGaN/GaN quantum well exhibit three PL emissions related to the 2D electron gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 595
Copyright
Copyright © Materials Research Society 1996

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References

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