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Photoluminescence Properties of CVD Diamond Excited by Ultra-Violet Synchrotron Radiation

Published online by Cambridge University Press:  15 February 2011

Jaihyung Won ,
Akimitsu Hatta ,
Toshimichi Ito ,
Takatomo Sasaki  and
Akio Hiraki
Jaihyung Won
Affiliation:
Department of Electrical engineering, Osaka University, 2–1 Yamada-oka, Suita, Osaka 565, Japan
Akimitsu Hatta
Affiliation:
Department of Electrical engineering, Osaka University, 2–1 Yamada-oka, Suita, Osaka 565, Japan
Toshimichi Ito
Affiliation:
Department of Electrical engineering, Osaka University, 2–1 Yamada-oka, Suita, Osaka 565, Japan
Takatomo Sasaki
Affiliation:
Department of Electrical engineering, Osaka University, 2–1 Yamada-oka, Suita, Osaka 565, Japan
Akio Hiraki
Affiliation:
Department of Electrical engineering, Osaka University, 2–1 Yamada-oka, Suita, Osaka 565, Japan
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Abstract

Photoluminescence (PL) properties of microwave-assisted chemical-vapor- deposition (CVD) diamond have been studied using ultraviolet synchrotron radiation. The defect-related 5RL PL feature, which was not detected in cathodoluminescence (CL), was observed for both undoped and boron-doped (200ppm) CVD diamond. The defect formation in the thin near- surface layer is discussed in relation to dependence of PL spectra on incident photon energy. In the case of boron-doped diamond, the boron-related peak was detected at 2.3eV while the band-A feature was not observed at 2.9eV. PL excitation (PLE) spectra associated with these emissions are also discussed in relation to absorption coefficients at energies above the band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 717
Copyright
Copyright © Materials Research Society 1996

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