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Photoluminescence of Amorphous Hydrogenated Carbon Films, a-C:H

Published online by Cambridge University Press:  25 February 2011

V. A. Vassilyev ,
A. S. Volkov ,
E. Musabekov ,
E. I. Terukov ,
V. E. Chelnokov  and
S. V. Chernyshov
V. A. Vassilyev
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
A. S. Volkov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
E. Musabekov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
E. I. Terukov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
V. E. Chelnokov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
S. V. Chernyshov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
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Abstract

Results are presented on the photoluminescence of plasma deposited amorphous carbon (a-C:H) films. Emission and exci tation spectra anti-Stokes emission, PL decay and fatigue, T-dependence of PL and photobleaching were mesuared. The data are discussed in terms of radiative recombination of the strongly localized electron-hole pairs.

As recently shown, in amorphous hydrogenated carbon films (a-C:H) powerful talls of localized states occur in the mobility gap that are due to a high degree of structural disorder [1] while a radiative recombination in this material is highly efficient [2, 3]. These properties, in our view, make a-C:H suitable for verification of models of recombination kinetics of photoexcited charge carriers in highly disordered systems with the use of photoluminescence (PL).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 515
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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