Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:49:25.895Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence Measurements in Interband Transition in Fast Neutron Irradiated In0.07Ga0.93As/A10.4Ga0.6 As Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

M. O. Manasreh  and
S. Subramanian
M. O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131-1356. E-Mail: [email protected]
S. Subramanian
Affiliation:
Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR 97331.
Get access

Abstract

Interband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied using a photoluminescence (PL) technique after the samples were irradiated with fast neutrons. It was observed that the PL intensity of the interband transition is reduced as the irradiation dose is increased. In Addition, the peak position energy of the interband transition was increased and then decreased as a function of irradiation dose. The results are explained in terms of electrons trapping, many-body effects, and irradiation-induced damages at the interfaces as well as in the well and barrier regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 525
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lang, D. V., Intern. Conf. on Radiation Effects in Semiconductors, 1976 (Inst. of Phys. London, UK), p. 7094 (1977).Google Scholar
2. Manasreh, M. O., Fischer, D. W., Mitchel, W. C., Phys. Stat. Sol. (b) 154, 11 (1989).Google Scholar
3. Manasreh, M. O., Chavez, J. R., Kemp, W. T., Hoenshel, K., and Missous, M., Materials Research Society, Vol. 484, 637–641 (1998).Google Scholar
4. Tan, H. H. and Jagadish, C., Appl. Phys. Lett. 71, 2680 (1997).Google Scholar
5. Huang, D. and Manasreh, M. O., Phys. Rev. B 54, 5620 (1996).Google Scholar
6. Manasreh, M. O., Szmulowicz, F., Vaughan, T., Evans, K. R., Stutz, C. E., and Fischer, D. W., Phys. Rev. B 43, 9996 (1991).Google Scholar
7. Szmulowicz, F., Manasreh, M. O., Stutz, C. E., and Vaughan, T., Phys. Rev. B 50, 11618 (1994).Google Scholar
8. Huang, D., Gumbs, G., and Manasreh, M. O., Phys. Rev. B 52, 14126 (1995).Google Scholar
9. Manasreh, M. O. and Yu, P. (unpublished).Google Scholar