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Photoluminescence from Porous Silicon Anodized with Monochromatic Light Illumination

Published online by Cambridge University Press:  15 February 2011

Takahiro Matsumoto ,
Yasuaki Masumoto ,
Go Arata  and
Hidenori Mimura
Takahiro Matsumoto
Affiliation:
Single Quantum Dot Project, EFLATO, Japan Science and Technology Corporation, 5–9–9 Tokodai, Tsukuba 300–26, Japan, [email protected]
Yasuaki Masumoto
Affiliation:
Single Quantum Dot Project, EFLATO, Japan Science and Technology Corporation, 5–9–9 Tokodai, Tsukuba 300–26, Japan, [email protected]
Go Arata
Affiliation:
Institute of Physics, University of Tsukuba, Ibaraki 305, Japan
Hidenori Mimura
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980–77, Japan
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Abstract

The effect of monochromatic light during the anodization of porous silicon is investigated from the points of view of structural characterization and photoluminescence. A clear correlation is observed between the photoluminescence peak energy and the bandgap energy determined by the illuminating photon energy. The difference of these two energies is analyzed by a size-dependent Stokes shift.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 535
Copyright
Copyright © Materials Research Society 1997

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References

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