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Photoluminescence From Er− Implanted 4h And 6h-SiC

Published online by Cambridge University Press:  21 March 2011

Shin-ichiro Uekusa  and
Takayuki Goto
Shin-ichiro Uekusa
Affiliation:
Department of Electrical and Electrical Engineering, Meiji University, 1-1-1, Higashi-mita, Tama-ku, Kawasaki-city, Kanagawa-ken, 214–8571, Japan
Takayuki Goto
Affiliation:
Department of Electrical and Electrical Engineering, Meiji University, 1-1-1, Higashi-mita, Tama-ku, Kawasaki-city, Kanagawa-ken, 214–8571, Japan
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Abstract

Erbium (Er) ions were implanted into 4H and 6H silicon carbide (SiC). The temperature-dependent photoluminescence (PL) and PL lifetime were characterized. The optimum annealing temperature for SiC : Er were 1600 °C, PL intensity decreased at 1700 ° C, and the bandedge luminescence changed in relation to the luminescence of Er3+. Thermal quenching of the luminescence of Er3+ was suppressed by using SiC with a wide band gap as a host material. The Er3+ -PL was observed at room temperature (RT). We monitored the auger effect that is believed to be the main cause of the thermal quenching process and concluded that, in the temperature range 15 K to 70 K, the thermal quenching process has a close relation to nonradiative recombination from the first excited state (4I13/2) to the ground state (4I15/2) of Er3+.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.13.1
Copyright
Copyright © Materials Research Society 2002

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