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Photoluminescence Detection of Native Defects in The Surface Region of Bulk CdTe

Published online by Cambridge University Press:  21 February 2011

P.M. Amirtharaj  and
N.K. Dhar
P.M. Amirtharaj
Affiliation:
U.S. Army Center for Night Vision and Electro-Optics Fort Belvoir, VA-22060
N.K. Dhar
Affiliation:
U.S. Army Center for Night Vision and Electro-Optics Fort Belvoir, VA-22060
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Abstract

The native defects introduced by Br2/CH3 OH etching and aging under atmospheric conditions have been investigated in In doped, bulk CdTe using photoluminescence (PL) spectroscopy. The results indicate a large enhancement of the Cd vacancy related 1.5896 eV excitonic feature with chemical treatment and aging. Hence, the primary perturbation is interpreted to be a small loss of Cd within the sampling region. This result is compared and contrasted with previous studies of etching induced modifications. The implications of Cd depletion on interpreting PL spectra, device processing and long term stability are considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 27
Copyright
Copyright © Materials Research Society 1990

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References

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