Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T17:34:29.291Z Has data issue: false hasContentIssue false

Photoluminescence Charateristics of SrTiO3:Pr3+,Ga3+ Single Crystal

Published online by Cambridge University Press:  14 March 2011

Jaedong Byun
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305-350, Korea
Yongjei Lee
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305-350, Korea
Boyun Jang
Affiliation:
Dept. of Materials Science, Korea University, Seoul 136-701, Korea
Youngmoon Yu
Affiliation:
Korea Research Institute of Chemical Technology, Taejon 305-343, Korea
Sunyoun Ryou
Affiliation:
Dept. of Materials Sci. & Engr., Sun Moon University, Choongnam 336-840, Korea
Kyungsoo Suh
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305-350, Korea
Get access

Abstract

SrTiO3 crystals containing varying concentrations of Pr and Ga were grown by a standard floating zone method and their photoluminescence characteristics were investigated. It was found that only a small fraction of Pr ions added are incorporated in the lattice. When the Ga ions are co-doped, the solubility of Pr ions is increased considerably. Comparing the ionic sizes of the host and dopants, it seems that the increase of solubility of Pr by Ga co-doping is due to charge compensation achieved by the additional Ga3+. The addition of Ga in Pr - activated SrTiO3 resulted also in a considerable enhancement of Pr3+ emission band at 615 nm. This result is attributed to the hole trapping effect of Ga3+ ions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lee, M., Nahm, S., Kim, M. Suh, K. and Byun, J., J. Kor. Cer. Soc. 35. 757 (1998).Google Scholar
2. Okamoto, S. and Kobayashi, H., J. Appl. Phys. 86. 5594 (1999).Google Scholar
3. Diallo, P. T., Boutinaud, P., Mamou, R., and Cousseins, J. C., Phys. Stat. Sol. (a) 160, 255 (1997).Google Scholar
4. Jacobsen, S., J. SID, 4, 331 (1996).Google Scholar
5. Baer, W. S., Phys. Rev. 144, 734 (1966).Google Scholar
6. Saburi, O., J. Phys. Soc. Jpn. 14, 1159 (1959).Google Scholar
7. Haart, L. De, Vries, A. De, and Blasse, G., J. Solid State Chem. 59, 291 (1985).Google Scholar
8. Grabner, L., Phys. Rev. 177, 1315 (1969).Google Scholar
9. Klasens, H.A, J. Electrochem. Soc., 100, 72(1953)Google Scholar
10. Schipper, W. J., Hoogendorp, M. F. and Blasse, G., J. Alloys Comps., 202, 283 (1993).Google Scholar