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Photoluminescence characterization of Mg implanted GaN

Published online by Cambridge University Press:  03 September 2012

C. Ronning ,
H. Hofsäss ,
A. Stötzler ,
M. Deicher ,
E.P. Carlson ,
P.J. Hartlieb ,
T. Gehrke ,
P. Rajagopal  and
R.F. Davis
C. Ronning
Affiliation:
University Göttingen, II. Phys. Institute, Bunsenstr. 7-9, D-37073 Göttingen, Germany
H. Hofsäss
Affiliation:
University Göttingen, II. Phys. Institute, Bunsenstr. 7-9, D-37073 Göttingen, Germany
A. Stötzler
Affiliation:
University of Konstanz, Fakultät für Physik, Box M621, D-78457 Konstanz, Germany
M. Deicher
Affiliation:
University of Konstanz, Fakultät für Physik, Box M621, D-78457 Konstanz, Germany
E.P. Carlson
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695, USA
P.J. Hartlieb
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695, USA
T. Gehrke
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695, USA
P. Rajagopal
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695, USA
R.F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695, USA
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Abstract

Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 oC for 10-60 minutes. Photoluminescence (PL) measurements showed the typical donor acceptor pair (DAP) transition at 3.25 eV after annealing at high temperatures, which is related to optically active Mg acceptors in GaN. After annealing at 1300 °C a high degree of optical activation of the implanted Mg atoms was reached in the case of low implantation doses. Electrical measurements, performed after removing the AlN-cap and the deposition of Pd/Au contacts, showed no p-type behavior of the GaN samples due to the compensation of the Mg acceptors with native n-type defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.44
Copyright
Copyright © Materials Research Society 1999

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