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Photoluminescence and Time-Resolved Photoluminescence Studies of Self-Assembled InAs Quantum Dots

Published online by Cambridge University Press:  01 February 2011

X. H. Zhang ,
J. R. Dong  and
S. J. Chua
X. H. Zhang
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
J. R. Dong
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S. J. Chua
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Abstract

Photoluminescence (PL) spectra and time resolved PL from self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic chemical vapor deposition are studied. A reduction in the emission linewidth with increasing temperature was observed at low temperature range and an increase in the linewidth at higher temperature. It was also observed that the variation of PL peak energy with temperature does not follow Varshni's equation. These anomalous behaviors of PL can be explained in term of thermal redistribution of carriers. It was also found that the PL decay time increases with photon wavelength, which is due to the carrier transfer between laterally coupled QDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K8.4
Copyright
Copyright © Materials Research Society 2002

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